The makes a dual N-channel enhancement mode MOSFET, designed to meet the stringent requirements of automotive applications. It is a green device and, totally Lead, halogen and Antimony free. This MOSFET comes in SOT363 packaging. It offers fast switching and high efficiency.

Maximum drain to source voltage is 60 Vand maximum gate to source voltage is ±20 V It offers a ultra-small package size It has low input/output leakage